Read transistor for single poly non-volatile memory using body contacted SOI device

US8299519B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Anthony I. Chou · Beacon, US
• Arvind Kumar · Beaverton, US

Key dates

• Filing date: Jan 11, 2010
• Grant date: Oct 30, 2012
• Expiry date: Feb 4, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6711

Abstract

A read transistor for single poly non-volatile memory using a body contacted SOI transistor and a method of manufacturing the same is provided. The non-volatile random access memory is formed in silicon on insulator (SOI). The non-volatile random access memory includes a read field effect transistor (FET) having a body contact formed in the silicon of the SOI. The body contact is in electrical contact with a diffusion region under a gate of the read FET.