Method and structure to improve body effect and junction capacitance

US8299545B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• Freeescale Semiconductor, Inc. · US

Inventors

• Xiangdong Chen · Irvine, US
• Geng Wang · Stormville, US
• Da Zhang · Hopewell Junction, US

Key dates

• Filing date: Jan 28, 2010
• Grant date: Oct 30, 2012
• Expiry date: Oct 10, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212

Abstract

A method and structure implant a first-type impurity within a substrate to form a channel region within the substrate adjacent a top surface of the substrate; form a gate stack on the top surface of the substrate above the channel region; and implant a second-type impurity within the substrate to form source and drain regions within the substrate adjacent the top surface. The channel region is positioned between the source and drain regions. The second-type impurity has an opposite polarity with respect to the first-type impurity. The method and structure implant a greater concentration of the first-type impurity, relative to a concentration of the first-type impurity within the channel region, to form a primary body doping region within the substrate below (relative to the top surface) the channel region; and to form secondary body doping regions within the substrate below (relative to the top surface) the source and drain regions.