Fabrication techniques to enhance pressure uniformity in anodically bonded vapor cells
US8299860B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2010 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Apr 28, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24149
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of fabricating vapor cells comprises forming a plurality of vapor cell dies in a first wafer having an interior surface region and a perimeter, and forming a plurality of interconnected vent channels in the first wafer. The vent channels provide at least one pathway for gas from each vapor cell die to travel outside of the perimeter of the first wafer. The method further comprises anodically bonding a second wafer to one side of the first wafer, and anodically bonding a third wafer to an opposing side of the first wafer. The vent channels allow gas toward the interior surface region of the first wafer to be in substantially continuous pressure-equilibrium with gas outside of the perimeter of the first wafer during the anodic bonding of the second and third wafers to the first wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.