Magnetic random access memory and method of manufacturing the same
US8300456B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2007 |
| Grant date | Oct 30, 2012 |
| Priority date | — |
| Expiry date | Dec 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An MRAM has a pinned layer and a magnetic recording layer connected to the pinned layer through a tunnel barrier layer. The magnetic recording layer has a first free layer, a second free layer being in contact with the tunnel barrier layer, and an intermediate layer provided between the first free layer and the second free layer. The first free layer includes a magnetization switching region whose magnetization direction can be switched by domain wall motion method. The second free layer has no domain wall. The intermediate layer is formed to cover at least the magnetization switching region. The magnetization switching region and the second free layer are magnetically coupled to each other through the intermediate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.