Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles
US8304033B2 · kind B2 · utility
2Cited by
34References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2009 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Aug 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0827
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.