Semiconductor component

US8304305B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Davide Chiola · Chino, US
• Carsten Schaeffer · Annenheim, AT

Key dates

• Filing date: Jun 8, 2011
• Grant date: Nov 6, 2012
• Expiry date: Jun 8, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/142

Abstract

A method for producing a semiconductor component is proposed. The method includes providing a semiconductor body having a first surface; forming a mask on the first surface, wherein the mask has openings for defining respective positions of trenches; producing the trenches in the semiconductor body using the mask, wherein mesa structures remain between adjacent trenches; introducing a first dopant of a first conduction type using the mask into the bottoms of the trenches; carrying out a first thermal step; introducing a second dopant of a second conduction type, which is complementary to the first conduction type, at least into the bottoms of the trenches; and carrying out a second thermal step.