Select gates for memory

US8304309B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventor

• Andrew Bicksler · Nampa, US

Key dates

• Filing date: Nov 5, 2009
• Grant date: Nov 6, 2012
• Expiry date: Mar 4, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

Methods of forming memory and memory devices are disclosed, such as a memory device having a memory cell with a floating gate formed from a first conductor, a control gate formed from a second conductor, and a dielectric interposed between the floating gate and the control gate. For example, a select gate may be coupled in series with the memory cell and has a first control gate portion formed from the first conductor and a second control gate portion formed from a third conductor. A contact may be formed from the third conductor and coupled in series with the select gate. Other methods and devices are also disclosed.