Method of forming an MOS transistor
US8304314B2 · kind B2 · utility
4Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2008 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Sep 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
In one embodiment, a method of forming an MOS transistor includes forming the MOS transistor to have an active region and a termination region. Within the termination region the method includes forming a plurality of trenches having a conductor within the plurality of trenches. The method also includes forming another conductor to make electrical contact to one of the conductors within the plurality of trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.