Interconnection structure for N/P metal gates
US8304842B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2010 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Nov 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to integrated circuit fabrication, and more particularly to an interconnection structure for N/P metal gates. An exemplary structure for an interconnection structure comprises a first gate electrode having a first portion of a first work-function metal layer under a first portion of a signal metal layer; and a second gate electrode having a second portion of the first work-function metal layer interposed between a second work-function metal layer and a second portion of the signal metal layer, wherein the second portion of the signal metal layer is over the second portion of the first work-function metal layer, wherein the second portion of the signal metal layer and the first portion of the signal metal layer are continuous, and wherein a maximum thickness of the second portion of the signal metal layer is less than a maximum thickness of the first portion of the signal metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.