Electromigration immune through-substrate vias
US8304863B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2010 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Sep 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1305
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A through-substrate via (TSV) structure includes at least two electrically conductive via segments embedded in a substrate and separated from each other by an electrically conductive barrier layer therebetween. The length of each individual conductive via segment is typically equal to, or less than, the Blech length of the conductive material so that the stress-induced back flow force, generated by each conductive barrier layer, cancels the electromigration force in each conductive via segment. Consequently, the TSV structures are immune to electromigration, and provide reliable electrical connections among a chips stacked in 3 dimensions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.