High indium containing InGaN substrates for long wavelength optical devices
US8306081B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2010 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Jan 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improved optical device. The device has a gallium nitride substrate member comprising indium entities, gallium entities, and nitrogen entities. In one or more embodiments, the gallium nitride substrate member has an indium content ranging from about 1 to about 50% in weight. Preferably, the gallium nitride substrate member has a semipolar crystalline surface region or a non-polar crystalline surface region. The device has an epitaxially formed laser stripe region comprising an indium content ranging from about 1 to about 50% and formed overlying a portion of the semipolar crystalline orientation surface region or the non-polar crystalline surface region. The laser stripe region is characterized by a cavity orientation in a predefined direction according to a specific embodiment. The laser strip region has a first end and a second end including respective a first cleaved facet provided on the first end of the laser stripe region and a second cleaved facet provided on the second end of the laser stripe region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.