(110) oriented silicon substrate and a bonded pair of substrates comprising said (110) oriented silicon substrate
US8309437B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2008 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Nov 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to method of fabricating a (110) oriented silicon substrate and to a method of fabricating a bonded pair of substrates comprising such a (110) oriented silicon substrate. The invention further relates to a silicon substrate with (110) orientation and to a bonded pair of silicon substrates comprising a first silicon substrate with (100) orientation and a second silicon substrate with (110) orientation. Methods include the steps of providing a basic silicon substrate with (110) orientation, the basic silicon substrate having a roughness being equal or less than 0.15 nm RMS, and depositing epitaxially a silicon layer with (110) orientation on the basic silicon substrate at a pressure between 40 Torr to 120 Torr, and at a temperature between about 1000° C. and about 1200° C. and using trichlorosilane or dichlorosilane as silicon precursor gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.