Patent · US Active

Methods for etching the edge of a silicon wafer

US8309464B2 · kind B2 · utility

0Cited by

47References

45Claims

0Family size

Assignee

MEMC Electronic Materials, Inc. · US

Inventors

Henry F. Erk · Chesterfield, US
Peter Albrecht · Hamburg, DE
Eugene R. Hollander · Wentzville, US
Thomas E. Doane · Troy, US
Judith A. Schmidt · Overland, US
Roland R. Vandamme · Wentzville, US
Guoqiang Zhang · Ballwin, US

Key dates

Filing date	Mar 31, 2009
Grant date	Nov 13, 2012
Priority date	—
Expiry date	Jan 18, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/219
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.