Semiconductor inspection method and device that consider the effects of electron beams
US8309922B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2010 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Jan 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is a device capable of probing with minimal effect from electron beams. Rough probing is made possible using a lower magnification than the magnification usually viewed. When target contact of semiconductor is detected, measurement position is set in the center of picture usually to move probe without moving stage. With the miniaturization, contact can be confirmed only at high magnification, although probe can be confirmed at low magnification on the contrary but it is necessary to display it in real time. Static image obtained at high magnification once is combined with image obtained at low magnification in real time from target contact required for probing and characteristic of probe to be displayed, so that probing at low magnification can be realized to reduce the effects of electron beams and obtain accurate electrical characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.