MOSFET switch with embedded electrostatic charge
US8310001B2 · kind B2 · utility
5Cited by
20References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2009 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Mar 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical device structure includes a volume of semiconductor material, laterally adjoining a trench having insulating material on sidewalls thereof. A gate electrode within the trench is capacitively coupled through the insulating material to a first portion of the semiconducting material. Some portions of the insulating material contain fixed electrostatic charge in a density high enough to invert a second portion of the semiconductor material when no voltage is applied. The inverted portions can be used as induced source or drain extensions, to assure that parasitic are reduced without increasing on-resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.