MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations
US8310866B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 7, 2008 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Jun 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thermally-assisted MRAM structure which is programmable at a writing mode operating temperature is presented and includes an anti-ferromagnet, an artificial anti-ferromagnet, a barrier layer, and a free magnetic layer. The anti-ferromagnet is composed of a material having a blocking temperature Tb which is lower than the writing mode operating temperature of the magnetic random access memory structure. The artificial anti-ferromagnet is magnetically coupled to the anti-ferromagnet, and includes first and second magnetic layers, and a coupling layer interposed therebetween, the first and second magnetic layers having different Curie point temperatures. The barrier layer is positioned to be between the second magnetic layer and the free magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.