Semiconductor device manufacturing method
US8314004B2 · kind B2 · utility
4Cited by
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4Claims
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Key dates
| Filing date | Jan 24, 2012 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Jan 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02263
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming, on a conductor for serving as one electrode of a capacitor, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.