Method for etching gate stack
US8314022B1 · kind B1 · utility
7Cited by
0References
17Claims
0Family size
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Key dates
| Filing date | May 20, 2011 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | May 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a metal gate stack is provided. The method includes forming a gate stack on a substrate, where the gate stack includes a metal gate. A wet etch process is performed on the gate stack. The wet etch process includes submersing the substrate with the gate stack in an aqueous solution composed of a wet etchant and an oxidizer, removing the substrate from the solution and rinsing the solution from the etched gate stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.