Patent · US Active

Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devices

US8314494B2 · kind B2 · utility

9Cited by

4References

19Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Markus Nopper · Dresden, DE
Axel Preusse · Radebeul, DE
Robert Seidel · Dresden, DE

Key dates

Filing date	Jan 19, 2009
Grant date	Nov 20, 2012
Priority date	—
Expiry date	Aug 13, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A conductive cap material for a copper region may be provided with enhanced etch resistivity by taking into consideration the standard electrode potential of one or more of the species contained therein. For example, instead of a conventionally used CoWP alloy, a modified alloy may be used, by substituting the cobalt species by a metallic species having a less negative standard electrode potential, such as nickel. Consequently, device performance may be enhanced, while at the same time the overall process complexity may be reduced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.