Built-in compliance in test structures for leakage and dielectric breakdown of dielectric materials of metallization systems of semiconductor devices

US8314625B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Oliver Aubel · Dresden, DE
• Frank Feustel · Dresden, DE
• Torsten Schmidt · Chemnitz, DE

Key dates

• Filing date: Nov 18, 2009
• Grant date: Nov 20, 2012
• Expiry date: Feb 6, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L22/34
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a test structure for determining dielectric breakdown events of a metallization system of semiconductor devices, a built-in compliance functionality may allow reliable switching off of the test voltage prior to causing high leakage currents, which may conventionally result in significant damage. Consequently, further failure analysis may be possible after the occurrence of a dielectric breakdown event.