Electrostatic chuck cleaning during semiconductor substrate processing
US8316867B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2011 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Aug 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for cleaning electrostatic chucks in processing chambers are provided. The process comprises flowing a backside gas comprising a reactive agent into a zone in a process chamber, the zone defined by a space between a surface of an electrostatic chuck or of a cleaning station and a surface of a substrate. The surface of the electrostatic chuck is etched with the reactive agent to remove debris. An apparatus for cleaning an electrostatic chuck is also provided, the apparatus comprising: a process chamber; an elongate arm having a reach disposed through a wall of the process chamber; an electrostatic chuck attached to the elongate arm; a cleaning station located within the reach of the elongate arm; and a reactive gas source that is operatively connected to the cleaning station.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.