Method of fabricating a memory card using SiP/SMT hybrid technology
US8318535B2 · kind B2 · utility
0Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2007 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Oct 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10159
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A portable memory card formed from a multi-die assembly, and methods of fabricating same, are disclosed. One such multi-die assembly includes an LGA SiP semiconductor package and a leadframe-based SMT package both affixed to a PCB. The multi-die assembly thus formed may be encased within a standard lid to form a completed portable memory card, such as a standard SD™ card. Test pads on the LGA SiP package, used for testing operation of the package after it is fabricated, may also be used for physically and electrically coupling the LGA SiP package to the PCB.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.