Power device structures and methods using empty space zones
US8319278B1 · kind B1 · utility
37Cited by
23References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2010 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Mar 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
Power semiconductor devices in which insulated empty space zones are used for field-shaping regions, in place of dielectric bodies previously used. Optionally permanent charge is added at the interface between the insulated empty space zone and an adjacent semiconductor drift region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.