Non-volatile memory device with data storage layer
US8319291B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2009 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Jan 25, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a non-volatile memory device including at least one horizontal electrode, at least one vertical electrode, at least one data storage layer and at least one reaction prevention layer. The least one vertical electrode crosses the at least one horizontal electrode. The at least one data storage layer is located in regions in which the at least one vertical electrode crosses the at least one horizontal electrode, and stores data by varying its electrical resistance. The at least one reaction prevention layer is located in the regions in which the at least one vertical electrode crosses the at least one horizontal electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.