Routing under bond pad for the replacement of an interconnect layer
US8319343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2006 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Sep 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a solder bump structure. In one aspect, the solder bump structure is utilized in a semiconductor device, such as an integrated circuit. The semiconductor device comprises active devices located over a semiconductor substrate, interconnect layers comprising copper formed over the active devices, and an outermost metallization layer positioned over the interconnect layers. The outermost metallization layer comprises aluminum and includes at least one bond pad and at least one interconnect runner each electrically connected to an interconnect layer. An under bump metallization layer (UBM) is located over the bond pad, and a solder bump is located over the UBM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.