Methods for fabricating semiconductor devices including azeotropic drying processes
US8324093B2 · kind B2 · utility
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1References
19Claims
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Inventor
Key dates
| Filing date | Jul 23, 2009 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Aug 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of a method for fabricating a semiconductor device are provided. In one embodiment, the method includes the steps of providing a partially-completed semiconductor device including a first feature formed in a porous material, wet cleaning the partially-completed semiconductor device with an aqueous cleaning solvent, exposing the partially-completed semiconductor device to a liquid chemical that forms an azeotropic mixture with water, and inducing evaporation of the azeotropic mixture to remove residual water from within the porous material absorbed during the wet cleaning step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.