Semiconductor process for etching a recess into a substrate by using an etchant that contains hydrogen peroxide
US8329547B2 · kind B2 · utility
2Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2010 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Apr 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor process is disclosed. The semiconductor process includes the steps of: providing a substrate having a specific area defined thereon; and performing an etch process by using an etchant comprising H2O2 to etch the specific area for forming a recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.