Method for producing a capping wafer for a sensor
US8329555B2 · kind B2 · utility
3Cited by
16References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2008 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Jan 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1461
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a capping wafer for a sensor having at least one cap includes: production of a contacting via extending through the wafer, and, temporally subsequent thereto, filling of the contacting via with an electrically conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.