Patent · US Active

Method for producing a capping wafer for a sensor

US8329555B2 · kind B2 · utility

3Cited by
16References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 20, 2008
Grant dateDec 11, 2012
Priority date
Expiry dateJan 15, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1461
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for producing a capping wafer for a sensor having at least one cap includes: production of a contacting via extending through the wafer, and, temporally subsequent thereto, filling of the contacting via with an electrically conductive material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.