Methods of forming a metal pattern and semiconductor device structure
US8329580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2011 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | May 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a metal pattern on a dielectric material that comprises forming at least one trench in a photosensitive, insulative material is disclosed. The at least one trench may be positioned over at least one bond pad. A metal is formed over the photosensitive, insulative material and into the at least one trench and a photoresist material is formed over the metal. A portion of the photoresist material may be removed to expose elevated areas of the metal such that a remaining portion of the photoresist material does not extend beyond sidewalls of the at least one trench and onto the elevated areas of the metal. The metal may be exposed laterally beyond the remaining portion of the photoresist material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.