Semi-polar nitride-based light emitting structure and method of forming same

US8330144B2 · kind B2 · utility

Assignee

• Palo Alto Research Center Incorporated · US

Inventors

• Andre Strittmatter · Magdeburg, DE
• Noble M. Johnson · Menlo Park, US
• Mark R. Teepe · Menlo Park, US
• Christopher L. Chua · San Jose, US
• Zhihong Yang · San Jose, US
• John E. Northrup · Palo Alto, US

Key dates

• Filing date: Jul 16, 2012
• Grant date: Dec 11, 2012
• Expiry date: Jul 16, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/815
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.