RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks
US8330265B2 · kind B2 · utility
6Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2007 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Feb 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells. Each of the plurality of RF transistor cells includes a control terminal and an output terminal. The RF transistor device further includes an RF input lead, and an input matching network coupled between the RF input lead and the RF transistor die. The input matching network includes a plurality of capacitors having respective input terminals. The input terminals of the capacitors are coupled to the control terminals of respective ones of the RF transistor cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.