Recording method of nonvolatile memory and nonvolatile memory
US8331136B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2010 |
| Grant date | Dec 11, 2012 |
| Priority date | — |
| Expiry date | Mar 16, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.