Mixed lithography with dual resist and a single pattern transfer
US8334090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2011 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Mar 4, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An inorganic electron beam sensitive oxide layer is formed on a carbon based material layer or an underlying layer. The inorganic electron beam sensitive oxide layer is exposed with an electron beam and developed to form patterned oxide regions. An ultraviolet sensitive photoresist layer is applied over the patterned oxide regions and exposed surfaces of the carbon based material layer, and subsequently exposed with an ultraviolet radiation and developed. The combined pattern of the patterned ultraviolet sensitive photoresist and the patterned oxide regions is transferred into the carbon based material layer, and subsequently into the underlying layer to form trenches. The carbon based material layer serves as a robust mask for performing additional pattern transfer into the underlying layer, and may be easily stripped afterwards. The patterned ultraviolet sensitive photoresist, the patterned oxide regions, and the patterned carbon based material layer are subsequently removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.