Resist pattern swelling material, and method for patterning using same
US8334091B2 · kind B2 · utility
6Cited by
13References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2008 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Jun 25, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.