Methods of forming conductive contacts in the fabrication of integrated circuitry
US8334196B2 · kind B2 · utility
0Cited by
5References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2010 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Jan 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a conductive contact includes forming a structure comprising an upper surface joining with a sidewall surface. The sidewall surface contains elemental-form silicon. Silicon is epitaxially grown from the sidewall surface. Dielectric material is formed over the upper surface and the epitaxially-grown silicon. A conductive contact is formed through the dielectric material to conductively connect with the upper surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.