Method of reducing electron beam damage on post W-CMP wafers
US8334209B2 · kind B2 · utility
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8References
20Claims
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Key dates
| Filing date | Sep 21, 2006 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Feb 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02074
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for reducing electron beam induced damage on semiconductor substrates employ compositions such as small chain organic solvents and non-neutral pH solutions to reduce or eliminate charge imbalances on semiconductor substrates caused by electron beam inspection of the semiconductor substrates. Damage to semiconductor substrates by electron beam inspection processes may also be reduced by generating or otherwise forming passivation films on a semiconductor substrate following electron beam inspection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.