SiC semiconductor device
US8334541B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 7, 2011 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Jul 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A SiC semiconductor device includes a reverse type MOSFET having: a substrate; a drift layer and a base region on the substrate; a base contact layer and a source region on the base region; multiple trenches having a longitudinal direction in a first direction penetrating the source region and the base region; a gate electrode in each trench via a gate insulation film; an interlayer insulation film covering the gate electrode and having a contact hole, through which the source region and the base contact layer are exposed; a source electrode coupling with the source region and the base region through the contact hole; a drain electrode on the substrate. The source region and the base contact layer extend along with a second direction perpendicular to the first direction, and are alternately arranged along with the first direction. The contact hole has a longitudinal direction in the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.