Method of operating a flash memory device
US8335118B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2010 |
| Grant date | Dec 18, 2012 |
| Priority date | — |
| Expiry date | Jul 30, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/20
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash memory device is disclosed. The flash memory device includes a memory cell array configured to have memory cells for storing data, and store initial data in a part of the memory cells, a page buffer circuit configured to have page buffers for providing data to be programmed in the memory cell or reading data from the memory cell, a controller configured to control the page buffer circuit so that the initial data stored in the memory cell array are read when operation of the flash memory device is started, discriminate error of the read initial data, and amend the error of the initial data, and an initial data latching circuit for latching the initial data of which the error is amended by the controller.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.