Method of plasma vapour deposition
US8337675B2 · kind B2 · utility
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3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2010 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Nov 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method induces plasma vapor deposition of metal into a recess in a workpiece. The method achieves re-sputtering of the metal at the base of the recess with a sputter gas by utilizing a mixture of Ar and He and/or Ne as the sputter gas with a ratio of He and/or Ne:Ar of at least about 10:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.