Method for depositing boron-rich films for lithographic mask applications
US8337950B2 · kind B2 · utility
5Cited by
33References
17Claims
0Family size
Assignee
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Key dates
| Filing date | May 24, 2010 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | May 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.