Shield contacts in a shielded gate MOSFET

US8338285B2 · kind B2 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventors

• Dixie Dunn · Salt Lake City, US
• Paul Thorup · Hillsboro, US
• Dean E. Probst · West Jordan, US
• Michael D. Gruenhagen · Salt Lake City, US

Key dates

• Filing date: May 9, 2011
• Grant date: Dec 25, 2012
• Expiry date: Jun 24, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A semiconductor structure is formed as follows. Trenches are formed in a semiconductor region and a shield electrode is formed in each trench. Gate electrodes are formed in a portion of the trenches that form an active region. Each gate electrode is disposed over the shield electrode and is isolated from the shield electrode by an inter-electrode dielectric. An interconnect layer is formed extending over the trenches. The interconnect layer is isolated from the gate electrodes in the active region by a dielectric layer and contacts the shield electrodes in a shield contact region separate from the active region. The interconnect layer contacts mesa surfaces between adjacent trenches in the shield contact region.