Gas cluster ion beam system with rapid gas switching apparatus
US8338806B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2010 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Jan 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.