III-nitride semiconductor device with stepped gate trench and process for its manufacture
US8338861B2 · kind B2 · utility
12Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2008 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Oct 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A III-nitride heterojunction power semiconductor device that includes a passivation body with a gate well having a top mouth that is wider than the bottom mouth thereof, and a method of fabrication for the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.