Integrated process for thin film resistors with silicides
US8338914B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2010 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Feb 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The formation of devices in semiconductor material is provided using an HF/HCL cleaning process. In one embodiment, the method includes forming at least one hard mask overlaying at least one layer of resistive material, forming at least one opening to a working surface of a silicon substrate of the semiconductor device, and cleaning the semiconductor device with a diluted HF/HCL process. The HF/HCL process includes applying a dilute of HF for a select amount of time and applying a dilute of HCL for a specific amount of time. After cleaning with the diluted HF/HCL process, a silicide contact junction is formed in the at least one opening to the working surface of the silicon substrate, and interconnect metal layers are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.