Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
US8338915B2 · kind B2 · utility
25Cited by
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12Claims
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Key dates
| Filing date | Aug 18, 2010 |
| Grant date | Dec 25, 2012 |
| Priority date | — |
| Expiry date | Nov 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/103
Abstract
A vertical TVS (VTVS) circuit includes a semiconductor substrate for supporting the VTVS device thereon having a heavily doped layer extending to the bottom of substrate. Deep trenches are provided for isolation between multi-channel VTVS. Trench gates are also provided for increasing the capacitance of VTVS with integrated EMI filter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.