Multilayer alignment and overlay target and measurement method

US8339605B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• Nanometrics Incorporated · US

Inventors

• Christopher P. Ausschnitt · Brookfield, US
• Lewis A. Binns · York, GB
• Jaime D. Morillo · Cedar Park, US
• Nigel P. Smith · Hsinchu, TW

Key dates

• Filing date: Nov 30, 2010
• Grant date: Dec 25, 2012
• Expiry date: Nov 30, 2030

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/70633
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields.