Semiconductor device and method of forming repassivation layer with reduced opening to contact pad of semiconductor die
US8343809B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2010 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Jan 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer has a plurality of first semiconductor die. A first conductive layer is formed over an active surface of the die. A first insulating layer is formed over the active surface and first conductive layer. A repassivation layer is formed over the first insulating layer and first conductive layer. A via is formed through the repassivation layer to the first conductive layer. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A second insulating layer is formed over the repassivation layer and encapsulant. A second conductive layer is formed over the repassivation layer and first conductive layer. A third insulating layer is formed over the second conductive layer and second insulating layer. An interconnect structure is formed over the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.