Patent · US Active

Using unstable nitrides to form semiconductor structures

US8344352B2 · kind B2 · utility

0Cited by

3References

20Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Juan E. Dominguez · Portland, US
Adrien LaVoie · Newberg, US
John J. Plombon · Portland, US
Joseph H. Han · San Jose, US
Harsono S. Simka · Saratoga, US

Key dates

Filing date	Jul 18, 2011
Grant date	Jan 1, 2013
Priority date	—
Expiry date	Jul 18, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/762
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.