Patent · US Active

Semiconductor component

US8344415B2 · kind B2 · utility

6Cited by

0References

15Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Holger Ruething · Munich, DE
Frank Pfirsch · Birkenfeld, DE
Armin Willmeroth · Friedberg, DE
Frank Hille · Munich, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Oct 25, 2007
Grant date	Jan 1, 2013
Priority date	—
Expiry date	Jun 23, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/60
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.