Microstructure device including a metallization structure with self-aligned air gaps and refilled air gap exclusion zones

US8344474B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Robert Seidel · Dresden, DE
• Thomas Werner · Radebeul, DE

Key dates

• Filing date: Feb 18, 2010
• Grant date: Jan 1, 2013
• Expiry date: Jan 22, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a sophisticated metallization system, self-aligned air gaps may be provided in a locally selective manner by using a radiation sensitive material for filling recesses or for forming therein the metal regions. Consequently, upon selectively exposing the radiation sensitive material, a selective removal of exposed or non-exposed portions may be accomplished, thereby resulting in a highly efficient overall manufacturing flow.